Fusion Neutron Damage to a Charge Coupled Device Camera

Abstract

A charge coupled device (CCD) camera's performance has been degraded by damage produced by 14 MeV neutrons (n) from the Rotating Target Neutron Source. High energy neutrons produce atomic dislocation in doped silicon electronics. This thesis explores changes in Dark Current (J), Charge Transfer Inefficiency (CTI), and Contrast Transfer Function (CTF) as measures of neutron damage. The camera was irradiated to a fluence, Phi, of 6.60 x 10 (exp 12) n/cm2. The camera temperature was lowered from room temperature to 267 K at a fluence of 4.7 x 10 (exp 11) n/cm2 to preclude saturation of the camera picture. With temperature compensations, J increased linearly with Phi. Four data points for J, CTF (ideal of 1.0), and CTI (ideal of 0.0) are given. Neutron irradiation significantly degraded the CCD camera performance; however, operating the camera at lower temperatures significantly reduces the effects. Damage thresholds for fluences greater than 6.60 x 10 (exp 12) n/cm2 and for all temperatures can be extrapolated from the results of this work.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1997
Accession Number
ADA339378

Entities

People

  • Christopher D. Amaden

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Coupled Devices
  • Charge Transfer
  • Complementary Metal-Oxide Semiconductors
  • Computer Programs
  • Differential Equations
  • Electromagnetic Fields
  • Energy
  • Energy Bands
  • Light Sources
  • Neutron Bombardment
  • Power Electronics
  • Radiation
  • Semiconductor Devices
  • Semiconductor Physics
  • Semiconductors
  • Solid State Physics
  • Transfer Functions

Fields of Study

  • Physics

Readers

  • Image Processing and Computer Vision.
  • Semiconductor Device Technology
  • Solar Physics

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems