Nanoelectronic Modeling Software Development

Abstract

As the integration density of Very Large Scale Integrated Circuits (VLSICs) increases, conventional device technologies are becoming limited by switching speed, power dissipation, and interconnect capacitance. Alternatively, resonant tunneling diodes (RTDs) may extend the high speed, low power performance of nanoelectronic scale ICs, particularly when combined with highly functional, compact ultra low power switching devices such as the novel two-dimensional MESFET (2-D MESFET). This project has lead to new device models (multi-gate 2-D MESFET) which, together with an accurate RTD model previously developed, have been implemented into a circuit simulator package which allows detailed studies of nanoelectronic ICs using these alternative device technologies.

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Document Details

Document Type
Technical Report
Publication Date
Mar 18, 1998
Accession Number
ADA340531

Entities

People

  • William C. Peatman

Tags

DTIC Thesaurus Topics

  • Circuits
  • Diodes
  • Fabrication
  • Field Effect Transistors
  • Integrated Circuits
  • Large Scale Integrated Circuits
  • Power Electronics
  • Quantum Tunneling
  • Resonant Tunneling Diodes
  • Semiconductor Devices
  • Semiconductors
  • Simulations
  • Simulators
  • Software Development
  • Tunnel Diodes
  • Two Dimensional
  • Very Large Scale Integration

Readers

  • Computational Modeling and Simulation
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology