Energy Assisted Epitaxy of GaN Using a Low Flux Nitrogen Atom Source

Abstract

This grant was issued under the Department of Defense Experimental Program to Stimulate Competitive Research as part of a national effort to develop nationally competitive programs in states which have historically not been successful at obtaining Federal Funding for independent research. In addition, the grant provided funding to both conduct research and to educate scientists and engineers in areas important to national defense. The grant was successful in all three areas. As detailed in this report, we have performed high quality research on fundamental issues of growth in GaN, a strategic material, in addition to training many students. Finally, a nationally competitive program was established as evidenced by the award of a regular ONR grant, "An Investigation of the Effects of Hydrogen on Growth Kinetics and Defect Formation in Group III-Nitride Semiconductors", (ONR-N00014-96-1-1008) as a direct offshoot of research performed on this grant.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1997
Accession Number
ADA341475

Entities

People

  • T. H. Myers

Organizations

  • West Virginia University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Chemistry
  • Critical Temperature
  • Crystals
  • Epitaxial Growth
  • Mass Spectrometry
  • Materials
  • Materials Science
  • Measurement
  • Molecular Beam Epitaxy
  • Optical Properties
  • Optics
  • Semiconductors
  • Spectra
  • Three Dimensional
  • Transitions
  • Two Dimensional

Readers

  • Defense Technology Research and Development.
  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics