Violet/Ultraviolet Semiconductor Injection Lasers Using GaN-Based Materials
Abstract
The GaN material system was examined for the growth of semiconductor injection lasers for high density optical interconnect applications. The effort focused on the growth, via molecular beam epitaxy, of GaN buffers and epitaxial layers on sapphire substrates. Substrate temperature, growth rate, and nitrogen power and flow rate were varied during buffer and epilayer growth to determine optimal parameters. RGA source pressures, RHEED, and substrate temperature, were monitored during growth, followed by mobility, photoluminescence, and X-ray measurements for good samples. The best recipe involved low temperature, low buffer growth rate followed by high temperature buffer anneal, followed by higher temperature, high mobility quality epilayer growth. Mobilities as high as 200 sq cm/V sec were measured. However, due to the lack of a matching substrate, the high defect densities obtained precluded the demonstration of a lasing structure.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1998
- Accession Number
- ADA341499
Entities
People
- William J. Schaff
Organizations
- Cornell University