A Theoretical Probe into the Electronic, Geometric, and Dynamic Properties of Semiconductors

Abstract

For the past several years there has been a major international effort on the heteroepitaxial growth of compound tetrahedrally coordinated semiconductors on Si substrates by MBE, MOCVD, etc.; on the fabrication of devices and circuits in these layers; and on the monolithic integration of such components with Si circuits fabricated on the same wafer. This effort is based on the significant potential that epitaxial growth of dissimilar semiconductor materials holds for technological applications. Nevertheless, relatively little theoretical work has been performed to understand the fundamental interactions and global issues governing the initial stages of growth and the structure of the first few mono-layers in these systems.

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Document Details

Document Type
Technical Report
Publication Date
Mar 30, 1998
Accession Number
ADA341581

Entities

People

  • John J. Joanopoulos

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Compound Semiconductors
  • Electronic Materials
  • Electronics
  • Electronics Industry
  • Energy Bands
  • Epitaxial Growth
  • Materials
  • Military Research
  • Optical Materials
  • Optical Properties
  • Physical Properties
  • Polarity
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics
  • Substrates

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology
  • Strategic Security Studies

Technology Areas

  • Microelectronics