Texture Analysis of CoGe2 Alloy Films Grown Heteroepitaxially on GaAs(100) Using Partially Ionized Beam Deposition

Abstract

Reflection X-Ray pole figure analysis techniques were used to study the heteroepitaxial relationships of the cobalt germanide CoGe2 to GaAs(100). The alloy films were grown using the partially ionized beam deposition technique, in which low energy Ge(+) ions are used to alter the heteroepitaxial orientation of the CoGe2 deposits. The CoGe2001(100)\\GaAs100(001) orientation, which has the smallest lattice mismatch, occurred for depositions performed at a substrate temperature around 280 deg C and with approx. 1200 eV Ge(+) ions. Lowering the substrate temperature or reducing the Ge(+) ion energy leads to CoGe2(100) orientation domination with CoGe2100(010)\\GaAs100(001) and CoGe2100(001)\\GaAs100(001). Substrate temperature alone produced only the CoGe2(100) orientation. For CoGe2(001) films, additional energy was required from Ge(+) ions in the evaporant stream.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1998
Accession Number
ADA342320

Entities

People

  • K. E. Mello
  • S. L. Lee
  • S. P. Murarka
  • T. M. Lu

Organizations

  • United States Army Armament Research, Development and Engineering Center

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystal Structure
  • Crystals
  • Diffraction
  • Energy
  • Engineering
  • Films
  • Materials
  • Melting Point
  • Military Research
  • Orientation (Direction)
  • Phase
  • Security
  • Semiconductors
  • Substrates
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.