Blue/UV Emitting GaN Laser

Abstract

This report presents results from an epitaxial growth study of Gallium Nitride (GaN) for use as ultraviolet (UV) and blue laser diodes and light emitting diodes (LEDs). The method of growth investigated was Molecular Beam Epitaxy (MBE). The group V source was nitrogen gas that was cracked utilizing a 13.56 MHz Radio Frequency (RF) plasma source. From this RF plasma, sufficient atomic nitrogen was produced to obtain growth rates of GaN of >0.65 micrometers/hr. Both n- and p-type wurtzite GaN was grown on basal plane sapphire substrates. In addition, results from growth attempts on cubic-SiC substrates is described. Results from photoluminescence spectroscopy (PL), Hall effect measurements, and Atomic Force Microscopy (AFM) of samples are shown and their effect on resulting changes in the growth recipe. Finally, results from the growth of Al(x)Ga(1-x)N.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1998
Accession Number
ADA343497

Entities

People

  • William A. Davis

Organizations

  • Rome Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystal Lattices
  • Crystal Structure
  • Electronics Laboratories
  • Epitaxial Growth
  • Laser Applications
  • Measurement
  • Metal-Semiconductor Junctions
  • Microscopy
  • Modules (Electronics)
  • Molecular Beam Epitaxy
  • Optical Properties
  • Power Electronics
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Microelectronics
  • Microelectronics - Graphene