Heterodimensional Technology for High Power, High Temperature Electronics
Abstract
There is an accelerating need for electronic devices and integrated circuits which operate at extremely high temperatures. Increasingly, electronics are finding applications in measurement and control systems in automotive and jet engine environments, for example, where temperatures can easily exceed 150 C. Wide band gap materials have shown promise for high temperature applications, however, cost and reliability issues presently limit their widespread use. GaAs MESFETs have shown some promise at temperatures as high as 400 C, however, high gate leakage currents and degraded breakdown characteristics lead to poor reliability and large variations in device characteristics. Recently, a greater than tenfold reduction in the threshold voltage temperature coefficient was demonstrated in the heterodimensional MESFET compared with GaAs MESFET. Heterodimensional devices have also demonstrated excellent operation to high breakdown voltage. The goal of this project is to explore the feasibility of developing heterodimensional technology for high power and/or high temperature applications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 30, 1998
- Accession Number
- ADA344265
Entities
People
- William C. Peatman