Low-Dimension Electronic Precesses in High Mobility GaAs/Al(x) Ga(1-x)As Nanostructures
Abstract
This final report briefly describes the construction and installation of an in situ MBE cleave-edge overgrowth apparatus and accomplishments in the following two research areas: (1) Novel cleaved-edge overgrowth structures for tunneling into and between one-dimensional (1D) and two-dimensional (2D) electron systems, and (2) the Terahertz emission from and the emission spectroscopy of low dimensional electron systems.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1998
- Accession Number
- ADA344651
Entities
People
- D. C. Tsui
- M. Shayegan
Organizations
- Princeton University