High Pressure Spectroscopic Studies of AlGaAs, GaAs, and II-VI Semiconductors and Heterostructures
Abstract
We have conducted four studies on three different but related materials. The first is a temperature study of a pseudomorphic epilayer of ZnSe on GaAs, where we measured the temperature dependence of the interlayer biaxial strain. The measurement was performed via photomodulation spectroscopy, tracking the splitting of the heavy - light hole transition energies. This method provides an accurate and direct measure of the strain. In the second study we investigated the pressure dependence of the polarized modulated optical reflectivity in an ordered alloy of InGaP2 as a function of hydrostatic pressure, and determined the pressure coefficients of the direct transitions as well as observed the indirect crossover. In the third study we compared the pressure behaviour of ordered and random alloy quantum wells of ZnCdSe/ZnSe in order to understand the confinement of the wavefunction in the ordered vs. random alloy materials. Finally, we have studied the temperature dependence of deformation potentials related the GAMMA-X crossover in GaAs/AlAs superlattices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 14, 1997
- Accession Number
- ADA344911
Entities
People
- Meera Chandrasekhar