Single-Word Multiple-Bit Upsets in Static Random Access Devices

Abstract

Space-borne electronics systems incorporating high-density static random access memory (SRAM) are vulnerable to single-word multiple-bit upsets (SMUs). We review here recent observations of SMU, present the results of a systematic investigation of the physical cell arrangements employed in several currently available SRAM device types, and discuss implications for the occurrence and mitigation of SMU.

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Document Details

Document Type
Technical Report
Publication Date
Jan 15, 1998
Accession Number
ADA345734

Entities

People

  • K. B. Crawford
  • Rokutano Koga
  • S. D. Pinkerton
  • T. J. Lie

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Space

DTIC Thesaurus Topics

  • Abstracts
  • Air Force
  • Air Force Facilities
  • Corporations
  • Cosmic Rays
  • Energy Transfer
  • Environment
  • Geosynchronous Orbits
  • Ground Based
  • High Density
  • Ions
  • Magnetic Tape
  • Memory Devices
  • Observation
  • Radiation
  • Radiation Effects
  • Space Systems

Fields of Study

  • Physics

Readers

  • Logistics and Supply Chain Management.
  • Military Engineering.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Space