Defects and Impurities in 4H- and 6H-SiC Homoepitaxial Layers: Identification, Origin, Effect on Properties of Ohmic Contacts and Insulating Layers and Reduction
Abstract
A hot wall chemical vapor deposition system has been constructed to deposit thin films of 4H- and 6H-SiC and AlN. The design incorporates a separate load lock from which the growth chamber and a RHEED chamber are attached. Operation awaits the completion of the laboratory upfitting to address the safety requirements necessary to use silane. Characteristics of high voltage, planar, PN junction diodes fabricated on 4H-SiC using field plate as an edge termination are reported for the first time. The diodes were formed by nitrogen implantation into p-type epitaxial layers and aluminum implantation into p-type epitaxial layers at 1000 deg C, using a deposited and patterned SiO2 layer as the mask.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1998
- Accession Number
- ADA345803
Entities
People
- Bayant Jayant Baliga
- M. O. Aboelfotoh
- Robert F Davis
- Robert J. Nemanich
Organizations
- North Carolina State University