International Conference on Defects in Semiconductors (19th), ICDS-19, Held in Aveiro, Portugal on 21-25 July 1997, Part 2
Abstract
The Final Proceedings for International Conference of Defects in Semiconductors, 21 July 1997 - 25 July 1997 Emphasis will be given on the properties of wide-bandgap materials, including quantum enhancement of effective band-gaps, semiconductors (silicon and III-V materials), plus radiation effects on detector materials. Topics will also include: (1) GaN, (2) Nanostructures, (3) Large bandgap materials, (4) defects in Epitaxial growth, (5) self-organizing rare earth, (6) metastable defects, (7) pairs and complexes, (8) defect reactions, and (9) radiation effects on detector material.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 23, 1998
- Accession Number
- ADA349484
Entities
People
- Gordon Davies
- Maria H. Nazare
Organizations
- University of Aveiro