International Conference on Defects in Semiconductors (19th), ICDS-19, Held in Aveiro, Portugal on 21-25 July 1997, Part 1

Abstract

The Final Proceedings for International Conference of Defects in Semiconductors, 21 July 1997 - 25 July 1997 Emphasis will be given on the properties of wide-bandgap materials, including quantum enhancement of effective band-gaps. semiconductors (silicon and III-V materials), plus radiation effects on detector materials. Topics will also include: (1) GaN, (2) Nanostructures, (3) Large bandgap materials, (4) defects in Epitaxial growth, (5) self-organizing rare earth, (6) metastable defects, (7) pairs and complexes, (8) defect reactions, and (9) radiation effects on detector material.

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Document Details

Document Type
Technical Report
Publication Date
Jan 23, 1998
Accession Number
ADA349485

Entities

People

  • Gordon Davies
  • Maria H. Nazare

Organizations

  • University of Aveiro

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemistry
  • Crystal Lattice Vibrations
  • Crystal Structure
  • Crystallography
  • Crystals
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • First Principles Calculations
  • Materials Science
  • Modules (Electronics)
  • Particle Physics
  • Phase Transformations
  • Power Electronics
  • Semiconductors
  • Solid State Physics
  • Spin-Orbit Interaction

Fields of Study

  • Materials science

Readers

  • Academic Conference Management
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing