MBE Growth and Characterization of GaN/AlN Structure Under Hydrostatic Pressure
Abstract
We present the results of a series of studies on the optical properties of GaN and AlGaN/GaN heterostructure using a variety of spectroscopic techniques. Strain effects were found to have a strong influence in determining the energies of excitonic transitions. The observations of spectral features associated with the transitions involving the ground and excited exciton states make it possible to directly estimate binding energy for the excitons in GaN. Optical pumping experiments were performed on AlGaN/GaN separate confinement heterostructures (SCH) grown on sapphire by MBE and SiC by MOCVD. The threshold pumping powers were found to be an order of magnitude lower than that for regular GaN epilayers. Nonlinear four wave mixing experiments were carried out in both femtosecond and picosecond regimes to study the intensity and time response of scattering efficiency, as well as the pump induced nonlinear refractive index change.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 30, 1997
- Accession Number
- ADA349969
Entities
People
- Jiyun Song
- R. J. Hauenstein
Organizations
- Oklahoma State University–Stillwater