MBE Growth and Characterization of Zincblende GaN and GaN/AlN Structures
Abstract
This Program includes fundamental studies of Molecular beam epitaxial (MBE) growth of GaN and its related alloys and heterostructures. In additions, the optical and electrical properties of resultant materials were measured using a variety of spectroscopic techniques. The optical properties concentrated on optically-pumped stimulated emission and laser action in GaN/AlGaN heterostructures. The objective was to better understand the underlying physics of MBE growth, and the optical and electrical properties for GaN-based device application. 1
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 15, 1997
- Accession Number
- ADA349982
Entities
People
- Jiyun Song
- R. J. Hauenstein
Organizations
- Oklahoma State University–Stillwater