Infrared Applications of Semiconductors II: Symposium Held in Boston, Massachusetts on December 1-4, 1997
Abstract
A variety of semiconductor materials have been used to fabricate diode lasers for the mid-infrared. Lasers using the lead salts (e.g., PbSnTe) have been commercially available for sometime. Mid-infrared emitting III-V semiconductors (e.g., InGaAsSb) have superior thermal conductivity, and diode lasers fabricated from these material offer higher powers, of particular interest are the III-V semiconductor laser based on type-II superlattices (e.g., InAs/GaInSb). Among the many unique properties attributed to type-II superlattices are small hole mass, reduced Auger recombination, and less inter-valence band absorption-all important for better lasers. Recent results with Quantum Cascade-type lasers are also very encouraging. This paper summarizes the important semiconductor materials for mid-infrared lasers with emphasis on the type-II superlattices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1997
- Accession Number
- ADA350195
Entities
People
- Donald L. Mcdaniel
- M. O. Manasreh
- Pachavis
- Richard H. Miles
- Sivalingam Sivananthan
Organizations
- Materials Research Society