Design and Characterization of Mis Transsistors from III-V Semiconductors.

Abstract

An ammonia based growth scheme was developed to achieve large growth rates and high quality III-N materials. The benefits of isomorphic substrates were pointed out followed by the demonstration of GaN growth on ZnO substrates. The band discontinuities were determined. recognizing the strong piezoelectric effect. Other developments include: low resistance ohmic contacts. highly ideal shottlu barriers. large power density MODFETs, optically pumped stimulated emission to demonstrate the quality of the separate confinement heterostructures. and finally UV detectos with the lowest reported noise and high responsivity.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1998
Accession Number
ADA352217

Entities

People

  • Hadis Morkoç

Organizations

  • University of Illinois Urbana–Champaign

Tags

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Electronics Laboratories
  • Field Effect Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • Materials Science
  • Metal-Semiconductor Junctions
  • Optical Properties
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics
  • Transistors

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics