Mode-locked Semiconductor Laser at 0.2 mm (1.5 THz)

Abstract

Pulse separation control for mode-locked far-infrared p-Ge lasers, self-mode-locking in p-Ge laser emission, and high-field stark effect for shallow impurity lines in p-Ge laser emission are reported.

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Document Details

Document Type
Technical Report
Publication Date
Aug 30, 1998
Accession Number
ADA353214

Entities

People

  • Robert E. Peale

Organizations

  • University of Central Florida

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electric Fields
  • Frequency
  • Frequency Bands
  • Laser Resonators
  • Lasers
  • Magnetic Fields
  • Measurement
  • Orientation (Direction)
  • Radiation
  • Scattering
  • Semiconductor Lasers
  • Semiconductors
  • Solid State Physics
  • Spectra
  • Spectroscopy
  • Stark Effect
  • Students

Fields of Study

  • Materials science
  • Physics

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics