Characterization of (Al,Ga,In)N Grown Using Lateral Epitaxial Overgrowth

Abstract

We describe the effect of various growth parameters such as V/III ratio and temperature on the lateral epitaxial overgrowth of GaN by MOCVD. We also discuss the effect of the mask pattern geometry used as the "seed" template. Structural characterization (AFM, TEM) show that for suitable growth conditions the LEO GaN contains almost no threading dislocations (approx. 10 (exp 5)/sq cm). Based on these results we developed a 40 micrometers period LEO GaN template (containing essentially dislocation-free regions approx. 15 micrometers wide) that is suitable for the subsequent growth of device layer structures and device fabrication. Preliminary results showing the improved properties of AlGaN/GaN and InGaN/GaN heterostructures grown on these templates are then discussed.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1998
Accession Number
ADA353538

Entities

People

  • Steven P. DenBaars
  • Umesh Mishra

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Composite Images
  • Dislocations
  • Electronic Equipment
  • Electronics
  • Fabrication
  • Geometry
  • Heterojunctions
  • High Temperature
  • Images
  • Materials
  • Measurement
  • Optical Properties
  • P-N Junction Diodes
  • P-N Junctions
  • Partial Pressure
  • Quantum Wells
  • Template Patterns

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology