Interfacial Bonding Research for Compliant Substrates
Abstract
The goal of this project is the improvement of epitaxially grown lattice mismatched III-V compound semiconductors by development of a practical compliant substrate technology. We have focused on two areas: relaxed epitaxial growth of InGaAs on a twist bonded GaAs compliant substrates and GaAs compliant substrates bonded with intermediate SiO2 or indium oxide layers: and relaxed epitaxial growth of InGaAs on a compliant substrate fabricated by epitaxial growth of an AlAs/GaAs structure with the subsequent oxidation of the AlAs. We have developed methods to improve the cleanliness and smoothness of the surfaces of both types of compliant substrates for subsequent epitaxial growth and have successfully produced intact GaAs layers as thin as 30 nm on top of oxidized AlAs in stripes 100 um wide. We have successfully grown GaAs epitaxially over thin layers. So far, however, we have not been able to produce large areas of dislocation free epitaxial material grown on our compliant substrates, in part because lattice mismatched epitaxy still nucleates poorly on these surfaces.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 24, 1998
- Accession Number
- ADA353764
Entities
People
- David L. Miller
- Theresa S. Mayer
Organizations
- Pennsylvania State University