International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (4th) Held in Cardiff University, Cardiff, Wales on 21-24 of June 1998, EXMATEC '98

Abstract

Partial contents: Latest developments in VGF technology: GaAs InP, and GaP; Photoelastic characterisation of residual strain in GaAs wafers annealed in different holder geometrics; Non destructive Mode index Measurement using Resonant Coupling; X-ray Characterisation of InP Substrates; Reliability issues due to hot electrons in GaAs and InP HEMTS; Optical and structural analysis of degraded high power in InGaAlAs/As/AlGaAs lasers; Failure analysis of heavily proton irradiated p+-n InGaP solar cells by EBIC and cathodoluminescence; Electron irradiation and thermal annealing effects on GaAs solar cells; Structural characterisation of InGaP/GaAs heterojunction bipolar transistors; III-Nitrides for Red and IR applications; Large area GaN substrates.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADA353906

Entities

Organizations

  • University of Wales

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Electronics Industry
  • Electronics Laboratories
  • High Electron Mobility Transistors
  • Mass Spectrometry
  • Materials
  • Materials Laboratories
  • Materials Processing
  • Materials Science
  • Measurement
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Optical Properties
  • Optics
  • Power Electronics
  • Quantum Wells
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Academic Conference Management
  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics