GaAs-GaInP Superlattices for Intersubband Photodetection
Abstract
We have demonstrated the first QWIP detectors using the quaternary InGaAlAs/InP materials system. We have observed excellent responsivity in the InGaAlAs/InP system compared to GaAs/AlGaAs QWIPs. By increasing the bandgap from ternary InGaAs to quaternary InGaAlAs we have shifted the responsivity out to longer wavelengths resulting in cutoff wavelengths of 13.3 and 19.4 micrometers, respectively for AlAs mole fractions of 0.1 and 0.15. We have also demonstrated lattice-matched mid-wavelength infrared detectors using InGaAs/InAlAs quantum wells. By combining both types of devices, we have produced the first lattice-matched dual band mid-wavelength and long-wavelength QWIP detectors on InP substrate. We have also demonstrated long-wavelength QWIPs (Lambda > 12 micrometers) in GaAs-GaInP structures, and theoretically calculated the performance of these devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1998
- Accession Number
- ADA353981
Entities
People
- Manijeh Razeghi
Organizations
- Northwestern University