Investigation of Main Parameters of Silicon Carbide Thyristors
Abstract
The purpose of this work is to study the main parameters of silicon carbide thyristors. The switch on processes have been studied within the temperature range from 160K to 500K. It was found that turn on constant Tr is strongly temperature dependent (at T=495K Tr is as small as Tr=1.9 ns for 400V thyristor). The critical charge density in SiC thyristors has been measured for the fist time at T=300K-560K. Forward current voltage characteristics were studied up to very high current densityj=100kA/cm2. The theoretical model was put forward to interpret the experimental current voltage characteristics. The critical current density jo at which the on state does not spread and occupies only part of the structure has been determined (jo falls in the range from 300A/cm2 to 750A/cm2). The operation frequency f=106 Hz at operation current densityj=1.4 x10,000 Ncm2 was achieved. The results obtained are compared with theoretical estimations. As a result of this work all main parameters of SiC thyristors are established.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 05, 1998
- Accession Number
- ADA356219
Entities
People
- M. E. Levinshtein
Organizations
- Russian Academy of Sciences