Optimization of the Photorefractivity in II-IV Semiconductors
Abstract
This work was aimed at optimization of the photorefractivity in the II-VI semiconductors CdTe, ZnTe and Cd(x-1)Zn(x)Te for real-time optical signal processing applications at near infrared wavelengths. During this work, several crystals of ZnTe, CdTe and Cd(x-1)Zn(x)Te were grown. Crystal growth of ZnTe and CdTe was carried out using low supersaturation nucleation and "contactless" growth by Vertical Physical Vapor Transport (PVT) in closed ampoules and the CdTe and Cd(x-1)Zn(x)Te crystals were grown using the vertical Bridgman technique. The quality of the crystals grown during this work was evaluated based on optical, electrical and structural characterization. Infrared microscopy was used to examine the internal crystalline structure of the samples. Most of the crystals grown during this work exhibited photorefractivity and photoconductivity. The resistivity of the vanadium doped crystals under dark conditions was found to be between 10 (exp 8) to (exp 10) ohms cm. The resistivity decreased significantly in the presence of illumination indicating that the crystals were highly photoconductive. The photorefractive properties of the crystals grown during this project were characterized by two beam coupling. All of the measurements revealed a strong photorefractive nonlinear effect.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1998
- Accession Number
- ADA357276
Entities
People
- G. V. Jagannathan
- S. B. Trivedi
- S. W. Kutcher