Reliability-Driven CAD System for Deep-Submicron VLSI Circuits
Abstract
This report describes development of simulation tools for analysis of ESD protection circuits, part of our reliability driven CAD system for deep submicron VLSI/ULSI circuits. Conventional layout extraction tools are inapplicable to ESD protection where parasitic devices and non-standard devices such as SCRs play a large role. We have developed a layout extraction tool which produces input decks for the ESD circuit simulation tool iETSIM. Substrate coupling effects impact the behavior of ESD protection circuits. Herein, we present a circuit level model for substrate coupling effects and a substrate resistance extraction methodology. We also present an improved, simplified model for semiconductor resistors which has been implemented in iETSIM.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1998
- Accession Number
- ADA357355
Entities
People
- Ching-hon Tsai
- Elyse Rosenbaum
- Patrick Juliano
- Sing-mo Kang
- Tong Li
Organizations
- University of Illinois Urbana–Champaign