Electro-Optics Based on Novel Materials Modifications
Abstract
Aims or goals of this work included growth, doping and characterization of new materials of interest to ARO for electro-optics and electronics applications within the DoD, often involving support for university research through collaborative programs initiated by Dr. John Zavada. A concomitant goal was the publication of papers that describe the results of this work and these collaborations. Results and significance of this work are described in the publications listed at the end of this report. Included are: successful growth of Er-doped (grown and implanted) nitrides and 1.54-mm stimulated light emission; characterization of p-and n-type commercial SiC; characterization of SiGeC and GeC films and oxidized AlN films for ARO applications; and measurement of the stability and of H (and its diffusion) in ScAlMgO4, SiC, LiAlO2, and LiGaO2, all substrate for III-nitrides growth, especially GaN; stability of hydrogen in 6H and 3C SiC; work with SiGeC and GeC; characterization of III-nitrides grown in a variety of laboratories; and stimulated emission of 1.5-mm light from Er doping of all such materials, for optical communications systems applications; band edge luminescence measurements; and PL measurements.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1998
- Accession Number
- ADA357976
Entities
People
- R. G. Wilson
- R. N. Schwartz
Organizations
- HRL Laboratories