High Pressure Spectroscopic Studies of AlGaAs, GaAs, and II-VI and Other Semiconductors and Heterostructures.
Abstract
We summarize our work over the last five years on high pressure studies using optical techniques such as photoluminescence, photoreflectance and Raman scattering of GaAs/AlAs superlattices, polycrystalline and amorphous powder samples of phenylene-type polymers and oligomers, ordered and disordered GaInP2, and ZnCdSe heterostructures. In order to modulate interatomic electronic interactions in the conventional semiconductors and to study both intrachain and interchain interactions in the conjugated polymers,these investigations were performed at hydrostatic pressures up to 70 kbar and in a temperature range of 20 to 300 K. We report characteristic changes of the emission spectrum which depend on both the molecular environment as well as the intramolecular bond configuration.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 12, 1998
- Accession Number
- ADA358069
Entities
People
- M. Chandrasekhar