Investigation of Normal Incidence Absorption and Optical Gain in Multicolor and Simplified N-type Quantum Well Infrared Photodetectors
Abstract
In this research project, we have conducted theoretical and experimental studies on normal incidence absorption in n-type direct gap QWIPs. A theoretical model for calculating the TE to TM transition ratios for the symmetrical LWIR- and step MWIR-QWIPs has been developed in this work. The role of strain on the normal incidence absorption has been investigated. We have also calculated the absorption coefficients for several n-type QWIPs, including both high-strain MWIR QWIP and LWIR TC-QWIPs. Analysis of simplified QWIPs for low photon background applications has been made. We have also studied the quantum confined Stark effect in a weakly coupled double quantum wells structure. Experimental study on three QWIP samples with different device structures, processing parameters and experimental conditions has been made to study the various effects on the normal incidence absorption. Several new simplified QWIPs have been designed and processed which show strong evidence of normal incidence absorption. Finally, a novel four-stack four-color QWIP has been designed, fabricated and characterized. Several journal and conference papers have been published and presented from this work.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1998
- Accession Number
- ADA358136
Entities
People
- Shengsan Li
- Xudong Jiang
Organizations
- University of Florida