Reactive Etching and Overlayer Growth with Ions and Molecular Beams
Abstract
This program focused on issues related to material removal from a surface by either physical sputtering or chemical etching. Scanning tunneling microscopy was used to gain atomic-level insights into structural changes associated with surface modification. Studies that involved sputtering showed that novel surface morphologies could be produced and that enhanced epitaxial growth could be achieved on these modified surfaces. Studies that emphasized chemical etching showed that it was possible to tune the possible reaction pathways by varying the surface temperature and the concentration of the etchant. Studies of assisted-etching of GaAs demonstrated the effects of laser irradiation in both photochemical and photothermal processes. Finally, studies of electron irradiation showed surface damage by 2000 eV electrons related to vacancy creation. Results from these studies have direct relevance to technologies that depend on thin film formation (growth) and material removal (etching).
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 29, 1998
- Accession Number
- ADA358242
Entities
People
- John H. Weaver
Organizations
- University of Minnesota