INGAP/GAAS Quantum Well Infrared Photodetectors
Abstract
The objective of this Phase II SBIR was to improve the quality of multi-quantum well materials suitable for infrared detector applications and to investigate novel bandgap engineering concepts utilizing InGaP/GaAs heterostructure materials. The subcontractor, Northwestern University, was successful in growing high quality InGaP/GaAs multi-quantum well materials by low pressure metal-organic chemical vapor deposition (MOCVD), and in demonstrating improved performance in the photodetector test structures fabricated from these materials. Most of the results in this report are from the research work at Northwestern University. The Prime contractor, Kopin corporation, was not successful in transferring the growth parameters for these materials from Northwestern University to their production-scale MOCVD reactors. No reportable results were obtained on the Kopin materials.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1997
- Accession Number
- ADA358405
Entities
People
- Jialu Fan
- N. Pan
Organizations
- Kopin Corporation