Multi-Scale Approach to Semiconductor Device Simulation Combining Semi-Classical and Quantum Regions
Abstract
A brief summary of research accomplishments during the past three years is given, along with a list of publications that contain the details of this work. Also included is a list of invited presentations of ARO sponsored research. These accomplishments include: development of our Schroedinger Equation Monte Carlo (SEMC) quantum transport simulator into a powerful and efficient tool for bridging the gap from classical to quantum transport; application of our theory of "quantum capacitance" to explain experimentally observed "charging" effects in quantum dots, and to provide experimental verification of the theory; development of a method of performing electronic structure calculations via an adaptive wavelet basis; providing new insights into supposedly "old" issues including p-n junction impedance and, using SEMC, the high-order quantum effect of collision broadening; and initiation of a first principles study of hot-carrier degradation in MOS devices including the hydrogen/deuterium isotope effect.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1998
- Accession Number
- ADA358480
Entities
People
- Karl Hess
- Leonard F. Register
Organizations
- University of Illinois Urbana–Champaign