Dopant Diffusion in InP and InGaAs

Abstract

Record high hole concentrations using C-doping in InGaAs lattice matched to InP were achieved via atmospheric pressure organometallic vapor phase epitaxy. When annealing in the presence of atomic hydrogen, it was demonstrated for the first time that no hole passivation occurs unless a large quantity of broken bonds exist in the crystal. A combination of dopant solubility studies and diffusion studies in InP and InGaAs have been used to determine that the Fermi energy is pinned approximately 0.35 eV below midgap during growth of InP, and is essentially unpinned during the growth of InGaAs lattice matched to InP.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1998
Accession Number
ADA358487

Entities

People

  • R. M. Cohen

Organizations

  • University of Utah

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Annealing
  • Barometric Pressure
  • Bipolar Junction Transistors
  • Crystal Growth
  • Diffusion
  • Engineering
  • Fermi Levels
  • Films
  • Heterojunction Bipolar Transistors
  • High Temperature
  • Hydrogen
  • Materials
  • Materials Science
  • Phase Transformations
  • Point Defects
  • Thin Films
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology