MBE Growth and Characterization of HgCdTe Heterostructures for Multi-Spectral Infrared Focal Plane Arrays

Abstract

MBE growth of HgCdTe affords excellent control of film layer thicknesses which are required to achieve a stacked simultaneously integrating two-color focal plane array. For the near term, a hybrid design using back-to-back ion implanted diodes in MBE grown material is being pursued. This structure could have as few as two layers, although three layers are preferred to insure full spectral separation and widen manufacturing tolerance windows. The structure also affords the ability to quantify progress in the growth of materials for monolithic approaches, which are in the more distant future. Progress in the growth of MBE films meeting the needs of this structure is presented.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1998
Accession Number
ADA358573

Entities

People

  • B. Seymour
  • H. D. Shih
  • H. F. Schaake
  • J. A. Dodge
  • M. J. Bevan

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Arrays
  • Backward Diodes
  • Co-Channel Interference
  • Detectors
  • Diodes
  • Electronics Laboratories
  • Focal Plane Arrays
  • Focal Planes
  • Heterojunctions
  • Infrared Detectors
  • Low Temperature
  • Metal-Semiconductor Junctions
  • Military Research
  • P-N Junctions
  • Radiation
  • Substrates
  • Thickness

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Systems Analysis and Design
  • Thin Film Deposition Science.