Positive Temperature Coefficient of Breakdown Voltage in 4H-SiC PN Junction Rectifiers
Abstract
It has been suggested that once silicon carbide (SiC) technology overcomes some crystal growth obstades, superior SiC semiconductor devices will supplant silicon in many high power applications. However, a positive temperature coefficient of breakdown voltage, a feature crucial to realizing excellent power device reliability, has not been observed in 4H-SiC, which is presently the best-suited SiC polytype for power device implementation. This paper reports the first experimental measurements of stable positive temperature coefficient behavior observed in 4H-SiC pn junction rectifiers. This research indicates that robust 4H-SiC power devices with high breakdown reliability should be achievable after SiC foundries reduce material defects such as micropipes, dislocations, and deep-level impurities.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1998
- Accession Number
- ADA359099
Entities
People
- Christian Fazi
- Philip G. Neudeck
Organizations
- United States Army Research Laboratory