International Conference on Extended Defects in Semiconductors, Held in Jaszowiec, Poland, on 6 - 11 September, 1998

Abstract

Partial Contents: Relaxation of misfit-induced strain in semiconductor heterostructures; Dislocations in relaxed SiGe/Si heterostructures; Misfit dislocations in epitaxial heterostructures: mechanisms of generation and multiplication; Dislocation mechanisms involved in the relaxation of heteroepitaxial semiconducting systems; Formation of dislocations in InGaAs/GaAs heterostructures; Quantum interference at misfit dislocations in III-V heterostructures; Crystalline defects as enhancement and limits to microminiaturization.

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Document Details

Document Type
Technical Report
Publication Date
Sep 11, 1998
Accession Number
ADA359210

Entities

Organizations

  • Polish Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Chemistry
  • Crystal Lattices
  • Crystallography
  • Crystals
  • Electromagnetic Fields
  • Electronics Laboratories
  • Energy Bands
  • Materials
  • Materials Science
  • Molecular Dynamics
  • Optical Properties
  • Optoelectronics
  • Power Electronics
  • Semiconductor Physics
  • Semiconductors
  • Solid State Physics

Fields of Study

  • Materials science

Readers

  • Academic Conference Management
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing