Growth and Fabrication of GaN-Based Heterojunction Bipolar Transistors

Abstract

GaN HBTs are promising for microwave power applications but face numerous technology barriers. In this project, we are addressing the enhancement of the hole concentration in p-type GaN by piezoelectric effects and/or the use of superlattices. We are currently assessing the activity of Mg-doped GaN on sapphire and lithium gallate as grown by MBE. In addition, we are modeling these effects to optimize the hole concentration in realistic HBT structures.

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Document Details

Document Type
Technical Report
Publication Date
Jan 25, 1999
Accession Number
ADA359392

Entities

People

  • April S. Brown

Organizations

  • Georgia Tech

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Avalanche Photodiodes
  • Bipolar Junction Transistors
  • Conduction Bands
  • Contract Administration
  • Contracts
  • Electric Fields
  • Electronics Laboratories
  • Energy Bands
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • Materials
  • Military Research
  • Piezoelectric Effect
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology