Mid-Infrared Diode Lasers Based on 3-4 Alloys for the Spectral Range 3-3.5 Micron Operating Near Room Temperature.

Abstract

This report results from a contract tasking SEC for Microelectronics of loffe Physico-Technical Institute as follows: Design and produce Mid IR (3-3.5 micron wavelength) diode lasers, capable of operating near room temperatures, using the III-V alloys InAsSbP and InAsSb.

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Document Details

Document Type
Technical Report
Publication Date
Jul 06, 1995
Accession Number
ADA359528

Entities

People

  • Yury Yakovlev

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Conduction Bands
  • Electron Beams
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Energy Gaps
  • Laser Diodes
  • Lasers
  • Optoelectronics
  • Quantum Efficiency
  • Quantum Wells
  • Semiconductors
  • Spectra
  • Two Dimensional
  • Valence Bands

Fields of Study

  • Materials science
  • Physics

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics