Growth and Characterization of Bulk Silicon Carbide for Electronics, Microwave Applications, and Optical Applications

Abstract

This report results from a contract tasking Academy of Scences of the Ukraine as follows: Grow both 6H and I 5R SiC using the Lely growth technique or other appropriate techniques as described in the attached proposal dated 22 July 1994. The SiC will be characterized by structural, physical and chemical analysis.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1995
Accession Number
ADA359535

Entities

People

  • Felix Nazarenkov

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Reactions
  • Crystals
  • Detectors
  • Diffraction
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Energy Gaps
  • Fabrication
  • Light Emitting Diodes
  • Measurement
  • Quantum Yields
  • Scattering
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Zener Diodes

Readers

  • Powder metallurgy of Titanium alloys.
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene