Heterostructures (CaSrBa)F2 on InP for Optoelectronics

Abstract

Temperature-reduced MBE growth of group II-a fluorides onto InP( 100) surface as well as optimal cleaning and passivation procedures for InP wafers have been newly developed taking into account exsisting literature data. High quality BaF2 and SrF2 layers onto InP(100) have been grown at 350 deg C under ultra-high vacuum conditions using epitaxial and bulk substrates. MBE and Laser Vacuum Epitaxy (LVE) growth methods for semiconductor-semiconductor (SS) and semiconductor-crystalline dielectric-semiconductor heterostructures are considered as well as experimental facilities for these processes are elaborated.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1995
Accession Number
ADA359538

Entities

People

  • Sergei L. Pyshkin

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Band Gaps
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Dielectric Films
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Heat Energy
  • Measurement
  • Modules (Electronics)
  • Optical Properties
  • Optics
  • Semiconductors
  • Three Dimensional
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Microelectronics