Growth of GaSe Crystals

Abstract

This report results from a contract tasking Qa Rel Associates as follows: Growth of GaSe crystals as described in the attached proposal dated 1 August 1994. Samples should be single crystals of varying thickness with faces perpendicular to the c-axis. The samples should have nominal area of at least 10 x 10 mm.

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Document Details

Document Type
Technical Report
Publication Date
Oct 24, 1995
Accession Number
ADA359571

Entities

People

  • G. Brydon
  • Kerim Allakhverdiev

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Abstracts
  • Classification
  • Contracts
  • Crystal Structure
  • Crystals
  • Differential Thermal Analysis
  • Diffraction
  • Information Operations
  • Physical Properties
  • Raman Scattering
  • Scattering
  • Single Crystals
  • Spectroscopy
  • Thermal Analysis
  • Thickness
  • United Kingdom

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Technical Research and Report Writing.