High Thermal Conductivity AlN Packages for High-Temperature Electronics
Abstract
A novel metallization for aluminum nitride substrates and related interconnection materials were investigated for packaging silicon carbide devices for use at temperatures up to 600 deg C. Aluminum nitride substrates were metallized with refractory metals using both thin and thick film metallization techniques. Excellent metallization adhesions (>- 10 ksi) were achieved at low sheet resistivities for both films. Phase diagrams were used to select potential bond pad, die attach and wire bond materials. Diffusion couples were constructed to screen the selected candidates. Gold and platinum were found to be stable bond pad materials on the refractory metallizations at 700 deg C. Gold-gold and platinum-platinum pad-wire combinations were suitable for use at temperatures of 600 deg C and beyond. Platinum-gold, copper-gold, and nickel-gold pad-wire combinations could be used with refractory metallized aluminum nitride substrate up to 400 deg C.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1998
- Accession Number
- ADA359647
Entities
People
- C. Toy
- E. Savrun
- M. Sarikaya