(SBIR 95-11) Circuits and Devices for High-Speed Instrumentation
Abstract
We have developed GaAs-based resonant tunneling diodes (RTDs) based on second quantum well level tunneling that achieve 200 kA/cm2 with 1.2 V peak voltage. We have shown that these results are reproducible by exploring a parameter space of quantum-well widths and barrier heights for this structure. A picosecond sampling oscilloscope was also developed. With a low-cost high-stability time-base and a 100 GHz sampling aperture created by the nonlinear transmission line driver, we have created a test vehicle that can be used for evaluating future RTD-circuit developments.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 28, 1998
- Accession Number
- ADA360051
Entities
People
- Robert A. Marsland