Topical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98) Held in Shonan Village Center, Hayama-machi, Kanagawa, Japan on August 30-September 2, 1998

Abstract

The 3rd Topical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA 98), held in Hayama-machi, Japan. A special emphasis was placed on the applications in information systems for this workshop. The Workshop sessions contain a variety of contributions on devices, materials, circuits and systems. The technologies employed are based on heterostructure bipolar transistors, heterostructure field effect transistors and resonant tunneling diodes, and make use of a variety of heterostructure material systems including III-Vs (e.g. GaAs, InP and related compounds), group IV semiconductors (e.g. SiGe), and wide bandgap semiconductors (e.g. 111-V Nitrides and SiC). Special emphasis was also placed on the effective insertion of these devices and circuits into systems such as mobile, fiber optic, space communications, as well as signal and data processing.

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Document Details

Document Type
Technical Report
Publication Date
Sep 02, 1998
Accession Number
ADA360961

Entities

People

  • D. Pavlidis
  • Takayuki Ishibashi

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Communication Systems
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Metal-Semiconductor Junctions
  • Mobile Phones
  • Modules (Electronics)
  • Multiple Access
  • Network Science
  • Power Electronics
  • Radio Frequency Devices
  • Semiconductor Devices
  • Semiconductors

Readers

  • Academic Conference Management
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Space