Band-Bending Effect of Low-Temperature GaAs on a Pseudomorphic Modulation-Doped Field-Effect Transistor

Abstract

Low-temperature photoluminescence (PL) measurements on pseudomorphic modulation-doped transistors with a low-temperature (LT) GaAs layer in the GaAs buffer layer clearly show a decrease in the quantum-well/PL transition energies compared to a structure with no LT GaAs. Self-consistent calculations of the electron and hole band structure confirm that the observed increase in the redshift in PL energies with increasing quantum-well/LT-GaAs spacing can be attributed to band bending induced by the Fermi level pinning at the undoped-GaAs/LT-GaAs interface.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1999
Accession Number
ADA361412

Entities

People

  • Fred H. Pollak
  • Godfrey Gumbs
  • Patrick A. Folkes
  • Weiqi Sun

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Electric Fields
  • Electron Density
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Fermi Levels
  • Field Effect Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Low Temperature
  • Military Research
  • New York
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Transistors
  • Universities

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Space