Synthesis of Diamond in High Power-Density Microwave Methane/Hydrogen/Oxygen Plasmas at Elevated Substrate Temperatures

Abstract

Effects of elevated substrate temperatures and oxygen additive on the chemical vapor deposition of diamond are presented. High power-density microwave plasmas in a high concentration of methane diluted by hydrogen led to high diamond growth rates at elevated substrate temperatures up to around 1450 deg C. With the addition of a small amount of oxygen (less than 2%), diamond films deposited at substrate temperatures higher than 1450 deg C at 30 microns/hr were achieved. At substrate temperatures higher than 1600 deg C, diamond nucleation density is low. However, diamond; grows well and forms high quality diamond crystallites.

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Document Details

Document Type
Technical Report
Publication Date
Apr 30, 1999
Accession Number
ADA362769

Entities

People

  • Jin Wei
  • Tsan-heui Chein
  • Yonhua Tzeng

Organizations

  • Auburn University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Additives (Chemicals)
  • Carbon Monoxide
  • Chemical Vapor Deposition
  • Crystals
  • Diamond Films
  • Dielectric Gases
  • Films
  • High Temperature
  • Hydrogen
  • Materials
  • Microscopy
  • Microwaves
  • Nucleation
  • Optical Pyrometers
  • Raman Spectra
  • Substrates
  • Vapor Deposition

Readers

  • Materials Science and Engineering.
  • Surface Engineering/Surface Coating Technology.
  • Thermal Physics or Thermal Science.