Silicon Intersubband Infrared Lasers

Abstract

In this document, we report on design of silicon-based intersubband lasers. There are: (1) The symmetric strain symmetrized Si/Ge intersubband laser, (2) The asymmetric design to obtain higher gain, (3) Studies and calculations of in-plane energy dispersion of Si/Ge superlattices needed for above designs. The p-i-p diode laser of, and (2) is grown up a relaxed Si (0.25) buffer layer on Si, with Ge quantum wells and Si barriers in a 3:1 thickness ratio.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1999
Accession Number
ADA363439

Entities

People

  • Lionel R. Friedman

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Band Gaps
  • Charge Carriers
  • Crystal Lattice Vibrations
  • Crystal Structure
  • Electronics Laboratories
  • Energy Bands
  • Fermi Levels
  • Infrared Lasers
  • Laser Diodes
  • Laser Resonators
  • Lasers
  • Quantum Cascade Lasers
  • Quantum Wells
  • Refractive Index
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Quantum Computing