GaAs-Based Mosfet Employing Epitaxial Al2O3

Abstract

This report provides an overview of the work performed during the Phase I, where the growth of Al2O3 on GaAs by gas source molecular beam epitaxy was demonstrated. We star with a description of the system that was constructed, and present results of the Al2O3 on GaAs thin film growth.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADA363849

Entities

People

  • Jaroslaw T. Zborowski

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Band Structures
  • Ceramic Materials
  • Crystal Growth
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Diffraction
  • Epitaxial Growth
  • Films
  • Materials
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Power Supplies
  • Thin Films
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Molecular Photonics/Laser Physics
  • Semiconductor Device Technology