Selected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AlN, GaN and SiC Thin Films
Abstract
A study of the homoepitaxial growth of GaN(0001) layers was conducted in situ and in real time using the low energy electron microscope. An evaporative cell supplied the Ga flux while the NH3 flux was supplied via a seeded beam supersonic jet source. At growth temperatures of 665 deg and 677 deg C, smooth GaN(0001) layers with well defined step structures were grown on MOCVD-GaN(0001) substrates. In general, non-faceted homoepitaxial layers were achieved when the Ga/NH3 flux ratios exceeded 2, starting with a Ga covered substrate surface, in the temperature range 655-710 deg C. Preliminary kinetics data for homoepitaxial GaN films grown under Ga stable conditions are consistent with an energy barrier for direct dissociative chemisorption of NH3 on GaN(0001) of approximately 0.5 eV.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1999
- Accession Number
- ADA364791
Entities
People
- H. Henry Lamb
- I. S. T. Tsong
- Robert F Davis
Organizations
- North Carolina State University