Theoretical Studies and Modeling of III-V Nitride Materials and Devices for Optoelectronic Applications

Abstract

Two main objectives of this research program include: (1) investigation of the fundamental material, transport, and optical properties of III-V nitrides; and (2) simulation and design optimization of GaN-based optoelectronic devices. Study of fundamental physical properties (such as carrier scattering and optical transitions) is based on an envelope function formalism for accurate description of band spectrum in bulk and confined structures. Numerical analyses and optimization of GaN-based devices are approached by solving a set of coupled equations self-consistently. This research initiative has provided valuable insight for the development and optimization of III-V nitride optoelectronic devices, particularly, blue/UV quantum well lasers.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1999
Accession Number
ADA365192

Entities

People

  • K. W. Kim

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Spectra
  • Band Structures
  • Conduction Bands
  • Energy Bands
  • Equations
  • Materials
  • Numerical Analysis
  • Optical Properties
  • Optimization
  • Optoelectronic Devices
  • Physical Properties
  • Quantum Well Lasers
  • Quantum Wells
  • Scattering
  • Spectra
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Calculus or Mathematical Analysis
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing